1. See the recent review by P. M. Mooney, J. Appl. Phys.67, R1 (1990).
2. P. M. Mooney, T. N. Theis and S. L. Wright, in Defects in Semiconductors 15, ed. G. Ferenczi, Mater. Sc. Forum, Vols. 38–41 (Trans Tech Publications, Switzerland, 1989) p. 1109.
3. T. Baba, M. Mizuta, T. Fujisawa, J. Yoshino and H. Kukimoto, Jpn. J. Appl. Phys.28, L891 (1989).
4. T. N. Morgan, in Defects in Semiconductors 15, ed. G. Ferenczi, Mater. Sc. Forum, Vols. 38–41 (Trans Tech Publications, Switzerland, 1989) p. 1079.
5. After this paper was presented, the author recognized that an alternate model, the Exchanged-Site (X-S) model, in which the substitutional Si atom interchanges with a neighboring As, behaves similarly and is in even closer agreement with experiment. This model, which will be discussed in a sub-sequent paper, leads to the same equations and statistical interpretation presented here.