Low power self-controllable voltage level and low swing logic based 11T SRAM cell for high speed CMOS circuits

Author:

Gavaskar K.ORCID,Ragupathy U. S.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Low power and noise‐immune 9 T compute SRAM cell design based on differential power generator and Schmitt‐trigger logics with14 nm FinFET technology;International Journal of Circuit Theory and Applications;2024-06-27

2. Design of power efficient and reliable hybrid inverter approach based 11 T SRAM design using GNRFET technology;AEU - International Journal of Electronics and Communications;2024-04

3. Design of low power SRAM cells with increased read and write performance using Read - Write assist technique;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2024-03

4. A Comparative Performance Analysis of 10 T and 11 T SRAM Cells;Lecture Notes in Electrical Engineering;2024

5. Design of an Energy-Efficient SRAM Cell with Optimum Cell Ratio;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16

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