Ion beam mixing for ohmic contact formation ton-Type GaAs-Reference-Cited by-同舟云学术

Ion beam mixing for ohmic contact formation ton-Type GaAs

Published:1988-05 Issue:3 Volume:17 Page:249-254
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Jie Zhao,Thompson D. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02652186.pdf

Reference14 articles.

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3. K. Ohata, T. Nozaki and N. Kawamura, IEEE Trans. Electron. Dev.ED-24, 1129 (1977).

4. J. W. Mayer, B. Y. Tsaur, S. S. Lau and L. S. Hung, Nucl. Instrum. and Meth.182/183, 1 (1981).

5. J. M. Poate, H. J. Leamy, T. T. Sheng and G. K. Cellar, “Laser Interactions and Laser Processing, 1978”, ed. S. D. Ferris,H. J. Leamy and J. M. Poate, American Institute of Physics,New York (1979) p. 527.

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1. The effect of defects caused by Xe ion bombardment on the structure of Au/GaAs contacts;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06

2. Formation of Ohmic contacts to n-GaAs using ion beam mixing of Tellurium;Applied Physics A Solids and Surfaces;1992-06

3. The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts;Journal of Applied Physics;1992-04

4. Ion Beam Treatment of Ohmic Contacts to n-TYPE Hg1-xCdxTe;MRS Proceedings;1992

5. The Effects of Ion Beam Mixing on Rapid Thermal Annealed Ohmic Contacts to N-GaAs;MRS Proceedings;1990