The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350937
Reference13 articles.
1. Effect of ion beam treatment on thermal annealing of GaAs-Au layer structures
2. Improved Uniformity of Reacted GaAs Contacts by Interface Mixing
3. Electrical Contact and Adhesion Modification Produced by High Energy Heavy Ion Bombardment of Au Films on GaAs
4. Sputtering-controlled ion mixing of Au/GaAs
5. Ion beam mixing of Au–Ge and Au–Ge–Ni deposited on GaAs
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Rutherford backscattering spectrometry and channeling studies on MeV Au-implanted GaAs(100) crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-06
2. Effect of MeV Au ion implantation on the composition of GaAs upon vacuum annealing: PIXE and XRF studies;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-11
3. Electrical behaviour of ion-mixed Au/n-GaAs contacts;Acta Physica Hungarica;1994-03
4. The effect of defects caused by Xe ion bombardment on the structure of Au/GaAs contacts;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
5. The Effect of Xe Ion Beam Treatment on the Interaction Between Gold and GaAs;MRS Proceedings;1992
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