The effect of defects caused by Xe ion bombardment on the structure of Au/GaAs contacts-Reference-Cited by-同舟云学术

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The effect of defects caused by Xe ion bombardment on the structure of Au/GaAs contacts

Published:1993-06 Issue: Volume:80-81 Page:548-551
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Jároli Erika,Gyulai J.,Pécz B.,Veresegyházy R.,Radnóczi G.,Barna P.B.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. Mechanism of forming ohmic contacts to GaAs

2. The influence of interstitial Ga and interfacial Au2P3on the electrical and metallurgical behavior of Au‐contacted III‐V semiconductors

3. Effect of ion beam treatment on thermal annealing of GaAs-Au layer structures

4. Sputtering-controlled ion mixing of Au/GaAs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rutherford backscattering spectrometry and channeling studies on MeV Au-implanted GaAs(100) crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-06

2. Effect of MeV Au ion implantation on the composition of GaAs upon vacuum annealing: PIXE and XRF studies;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-11

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