Electrical characteristics of MOS capacitors with HfTiON as gate dielectric
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11595-009-1057-0.pdf
Reference15 articles.
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3. G D Wilk, R M Wallace, J M Anthony. High-k Gate Dielectrics: Current Status and Materials Properties Considerations[J]. J. Appl. Phys., 2001, 89(10): 5 243–5 275
4. B H Lee, L Kang, R Nieh. Thermal Stability and Electrical Characteristics of Ultrathin Hafnium Oxide Gate Dielectric Reoxidized with Rapid Thermal Annealing[J]. Appl. Phys. Lett., 2000, 76: 1 926–1 928
5. K Yamamoto, S Hayashi, M Niwa. Electrical and Physical Properties of HfO2 Films Prepared by Remote Plasma Oxidation of Hf Metal[J]. Appl. Phys. Lett., 2003, 83(11): 2 229–2 231
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1. A detailed study on frequency dependent electrical characteristics of MOS capacitors with dysprosium oxide gate dielectrics;Semiconductor Science and Technology;2019-12-23
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