Effect of Ti Doping to Maintain Structural Disorder in InOx-Based Thin-Film Transistors Fabricated by RF Magnetron Sputtering
Author:
Funder
Murata Science Foundation
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Software
Link
http://link.springer.com/article/10.1007/s13319-017-0147-6/fulltext.html
Reference39 articles.
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3. Aikawa, S., Nabatame, T., & Tsukagoshi, K. (2013). Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications. Applied Physics Letters, 103, 172105. doi: 10.1063/1.4822175 .
4. Aikawa, S., Mitoma, N., Kizu, T., Nabatame, T., & Tsukagoshi, K. (2015). Suppression of excess oxygen for environmentally stable amorphous In–Si–O thin-film transistors. Applied Physics Letters, 106, 192103. doi: 10.1063/1.4921054 .
5. Barquinha, P., Pereira, L., Gonçalves, G., Martins, R., & Fortunato, E. (2009). Toward high-performance amorphous GIZO TFTs. Journal of the Electrochemical Society, 156, H161. doi: 10.1149/1.3049819 .
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1. Ti-doped indium gallium oxide electrolyte–insulator–semiconductor membranes for multiple ions and solutes detectors;Journal of Materials Science: Materials in Electronics;2019-11-02
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