Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors-Reference-Cited by-同舟云学术

Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

Published:2015-05-11 Issue:19 Volume:106 Page:192103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Aikawa Shinya¹²^ORCID,Mitoma Nobuhiko¹,Kizu Takio¹^ORCID,Nabatame Toshihide³,Tsukagoshi Kazuhito¹

Affiliation:

1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

2. Research Institute for Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015, Japan

3. MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

Funder

Grants-in-Aid for Scientific Research

Japan Synchrotron Radiation Research Institute

JGC-S Scholarship Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921054

Reference47 articles.

1. Material characteristics and applications of transparent amorphous oxide semiconductors

2. Present status of amorphous In–Ga–Zn–O thin-film transistors

3. Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

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