Metalorganic chemical vapor deposition of ferroelectric Pb(ZrxTi1- xO3thin films
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Chemical Engineering,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/BF02706073.pdf
Reference8 articles.
1. Ansari, P. H. and Safari, A., “In-Situ Deposition of PZT Thin Films by RF Magnetron Sputtering”,Integrated Ferroelectrics,7, 185 (1995).
2. Keijser, M., Veldhoven, P. J. and Dormans, G. J. M., “Organometallic Chemical Vapor Deposition of Lead Zirconate Titanate Thin Films”,Mat. Res. Soc Symp. Proc.,310, 223 (1993).
3. Parker, L. H. and Tasch A. F., “Ferroelectric Materials for 64 Mb and 256 Mb DRAMs”,IEEE Circuits and Devices Magazine,6, 17 (1990).
4. Saenger, K. L., Roy, R. A., Etzold, K. F. and Cuomo, J. J., “Lead Zirconate Titanate Films Produced by Pulsed Laser Deposition”,Mat. Res. Soc. Symp. Proc,200, 115 (1990).
5. Schwartz, R. W., Boyle, T. J., Lockwood, S. J., Sinclair, M. B., Dimos, D. and Buchheit, C. D.,“Sol-Gel Processing of PZT Thin Films: A Review of the State-of-The-Art and Process Optimization Strategies”,Integrated Ferroelectrics,7, 259 (1995).
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1. Applications of atomic layer chemical vapor deposition for the processing of nanolaminate structures;Korean Journal of Chemical Engineering;2002-05
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4. The influence of chemical passivation on the PZT/Pt electrode interface;Korean Journal of Chemical Engineering;1998-01
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