Vapor growth of V-doped MoS2 monolayers with enhanced B-exciton emission and broad spectral response
-
Published:2023-12-07
Issue:1
Volume:16
Page:
-
ISSN:2095-2767
-
Container-title:Frontiers of Optoelectronics
-
language:en
-
Short-container-title:Front. Optoelectron.
Author:
Zheng Biyuan,Sun Xingxia,Zheng Weihao,Zhu Chenguang,Ma Chao,Pan Anlian,Li Dong,Li Shengman
Abstract
AbstractDynamically engineering the optical and electrical properties in two-dimensional (2D) materials is of great significance for designing the related functions and applications. The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials; however, this approach still remains to be explored in 2D materials. Here, we systematically demonstrate the growth of vanadium-doped molybdenum disulfide (V-doped MoS2) monolayers via an alkali metal-assisted chemical vapor deposition method. Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS2 monolayers. This was also confirmed by Raman and X-ray photoelectron spectroscopy. Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS2 monolayers (with low doping concentration). Most importantly, through temperature-dependent study, we observed efficient valley scattering of the B-exciton, greatly enhancing its emission intensity. Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS2, where a clear n-type behavior transited first to ambipolar and then to lightly p-type charge carrier transport. In addition, visible to infrared wide-band photodetectors based on V-doped MoS2 monolayers (with low doping concentration) were demonstrated. The V-doped MoS2 monolayers with distinct B-exciton emission, enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and offer novel materials for optoelectronic applications.
Graphical abstract
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference52 articles.
1. Li, W., Gong, X., Yu, Z., Ma, L., Sun, W., Gao, S., Koroglu, C., Wang, W., Liu, L., Li, T., Ning, H., Fan, D., Xu, Y., Tu, X., Xu, T., Sun, L., Wang, W., Lu, J., Ni, Z., Li, J., Duan, X., Wang, P., Nie, Y., Qiu, H., Shi, Y., Pop, E., Wang, J., Wang, X.: Approaching the quantum limit in two-dimensional semiconductor contacts. Nature 613(7943), 274–279 (2023) 2. Kang, K., Xie, S., Huang, L., Han, Y., Huang, P.Y., Mak, K.F., Kim, C.-J., Muller, D., Park, J.: High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 520(7549), 656–660 (2015) 3. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., Kis, A.: Single-layer MoS2 transistors. Nat. Nanotech. 6(3), 147–150 (2011) 4. Zi, Y., Zhu, J., Hu, L., Wang, M., Huang, W.: Nanoengineering of tin monosulfide (SnS)-based structures for emerging applications. Small Science 2(3), 2100098 (2022) 5. Li, T., Guo, W., Ma, L., Li, W., Yu, Z., Han, Z., Gao, S., Liu, L., Fan, D., Wang, Z., Yang, Y., Lin, W., Luo, Z., Chen, X., Dai, N., Tu, X., Pan, D., Yao, Y., Wang, P., Nie, Y., Wang, J., Shi, Y., Wang, X.: Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotech. 16(11), 1201–1207 (2021)
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
|
|