Depth of cut per abrasive in fixed diamond wire sawing

Author:

Chung Chunhui,Le Van-Nhat

Publisher

Springer Science and Business Media LLC

Subject

Industrial and Manufacturing Engineering,Computer Science Applications,Mechanical Engineering,Software,Control and Systems Engineering

Reference27 articles.

1. Goldstein M, Watanabe M (2008) 450 mm silicon wafers challenges—Wafer thickness scaling. In: Honolulu, HI, United states, 2008. ECS transactions. Electrochemical Society Inc., pp 3–13

2. Tso P-L, Yan B-H (2005) A study of slicing process with thin diamond wire. In: 3rd international conference on leading edge manufacturing in 21st century, LEM, Nagoya, Japan, 2005. Japan Society of Mechanical Engineers, pp 619–624

3. Sugawara J, Yamakawa M, Mizoguchi A (2001) Development of fixed-abrasive grain wire saw. SEI Tech Rev 52:87–90

4. Chung C, Nhat LV (2013) Surface generation of diamond coated wire for wire sawing process. In: 16th international conference on advances in materials and processing technologies. AMPT, Taipei, p 2013

5. Wu H, Melkote SN (2008) Study of ductile-to-brittle transition in single grit diamond scribing of silicon: Application to wire sawing of silicon wafers. J Eng Mater Technol 134(4):1–8

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