Gate Oxide Reliability: Physical and Computational Models-Reference-Cited by-同舟云学术

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Gate Oxide Reliability: Physical and Computational Models

Published:2004 Issue: Volume: Page:201-258
ISSN:0933-033X
Container-title:Springer Series in MATERIALS SCIENCE
language:
Short-container-title:

Author:

Ghetti A.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-662-09432-7_6

Reference145 articles.

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2. R. Degraeve, J. Ogier, R. Bellens, P. Roussel, G. Groeseneken, and H. Maes, IEEE Trans. Electron Dev., 45, 472 (1998).

3. International technology roadmap for semiconductors, 2001 edition, http://public.itrs.net , 2001.

4. D. DiMaria and J. Stathis, Applied Physics Letters, 74, 1752 (1999).

5. R. Degraeve, N. Pangon, B. Kaczer, T. Nigam, G. Groeseneken, and A. Naem, in Proc. VLSI Technology Symposium, p. 59, 1999.

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