Author:
Li Qingjiang,Li Kun,Wang Yongzhou,Liu Sen,Song Bing
Publisher
Springer Science and Business Media LLC
Reference29 articles.
1. Lastras-Montaño M A, Cheng K T. Resistive random-access memory based on ratioed memristors. Nat Electron, 2018, 1: 466–472
2. Lee S, Song J, Seong C, et al. Full chip integration of 3-D cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier. In: Proceedings of Symposium on VLSI Circuits Digest of Technical Papers, Honolulu, 2016
3. Li Y, Long S B, Liu Q, et al. Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two-dimensional layered materials. Small, 2017, 13: 1604306
4. Yao P, Wu H Q, Gao B, et al. Fully hardware-implemented memristor convolutional neural network. Nature, 2020, 577: 641–646
5. Zidan M A, Jeong Y J, Lee J, et al. A general memristor-based partial differential equation solver. Nat Electron, 2018, 1: 411–420
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