A Configurable Artificial Neuron Based on a Threshold-Tunable TiN/NbOₓ/Pt Memristor-Reference-Cited by-同舟云学术

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A Configurable Artificial Neuron Based on a Threshold-Tunable TiN/NbOₓ/Pt Memristor

Published:2022-04 Issue:4 Volume:43 Page:631-634
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Yongzhou¹^ORCID,Xu Hui²,Wang Wei²,Zhang Xumeng³^ORCID,Wu Zuheng¹^ORCID,Gu Ran²,Li Qingjiang¹^ORCID,Liu Qi³^ORCID

Affiliation:

1. Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

2. College of Electronic Science and Technology, National University of Defense Technology, Changsha, China

3. Frontier Institute of Chip and System, Fudan University, Shanghai, China

Funder

Major Program of the Ministry of Science and Technology of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9741089/09707769.pdf?arnumber=9707769

Reference33 articles.

1. First-spike latency of auditory neurons revisited

2. Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

3. Uniform and robust TiN/HfO2/Pt memristor through interfacial Al-doping engineering

4. Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse

5. A Self-Rectification and Quasi-Linear Analogue Memristor for Artificial Neural Networks

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2. Review of memristor based neuromorphic computation: opportunities, challenges and applications;Engineering Research Express;2024-08-07

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4. Security enhancement of artificial neural network using physically transient form of heterogeneous memristors with tunable resistive switching behaviors;Science China Materials;2024-07-16

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