Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11432-023-3960-6.pdf
Reference5 articles.
1. Cross J S, Kim S H, Wada S, et al. Characterization of Bi and Fe co-doped PZT capacitors for FeRAM. Sci Tech Adv Mater, 2010, 11: 044402
2. Francois T, Grenouillet L, Coignus J, et al. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2019. 1–7
3. Wang P, Wang D, Vu N M, et al. Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy. Appl Phys Lett, 2021, 118: 223504
4. Pawlaczyk C Z, Tagantsev A K, Brooks K, et al. Fatigue, rejuvenation and self-restoring in ferroelectric thin films. Integr Ferroelectr, 1995, 9: 293–316
5. Mikolajick T, Slesazeck S, Mulaosmanovic H, et al. Next generation ferroelectric materials for semiconductor process integration and their applications. J Appl Phys, 2021, 129: 100901
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