Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
http://link.springer.com/content/pdf/10.1007/s11432-020-3005-8.pdf
Reference30 articles.
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3. Yang H, Xiao M Q, Cui Y, et al. Nonvolatile memristor based on heterostructure of 2D room-temperature ferroelectric α-In2Se3 and WSe2. Sci China Inf Sci, 2019, 62: 220404
4. Böscke T S, Müller J, Bräuhaus D, et al. Ferroelectricity in hafnium oxide thin films. Appl Phys Lett, 2011, 99: 102903
5. Wang L F, Luo Y, Wang J S, et al. Temperature-dependent evolution of surface charge screening and polarization at ferroelectric surfaces. Sci China-Phys Mech Astron, 2019, 62: 987721
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