Deep insight into the voltage amplification effect from ferroelectric negative capacitance
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
http://link.springer.com/content/pdf/10.1007/s11432-019-9885-7.pdf
Reference9 articles.
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3. Salahuddin S, Datta S. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Lett, 2008, 8: 405–410
4. Obradovic B, Rakshit T, Hatcher R, et al. Ferroelectric switching delay as cause of negative capacitance and the implications to NCFETs. In: Proceedings of IEEE Symposium on VLSI Technology, 2018. 51–52
5. Wang H M, Yang M X, Huang Q Q, et al. New insights into the physical origin of negative capacitance and hysteresis in NCFETs. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2018
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1. Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors;Science China Information Sciences;2022-05-13
2. Physical investigation of subthreshold swing degradation behavior in negative capacitance FET;Science China Information Sciences;2022-04-21
3. Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation;Science China Information Sciences;2021-01-20
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