Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s11432-021-3268-0.pdf
Reference5 articles.
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2. Zhou J R, Wu J B, Han G Q, et al. Frequency dependence of performance in Ge negative capacitance pFETs achieving sub-30 mV/decade swing and 110 mV hysteresis at MHz. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2017. 373–376
3. Wang H M, Yang M X, Huang Q Q, et al. New insights into the physical origin of negative capacitance and hysteresis in NCFETs. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2018. 707–711
4. Wang H M, Huang Q Q, Yang M X, et al. Deep insight into the voltage amplification effect from ferroelectric negative capacitance. Sci China Inf Sci, 2019, 62: 089401
5. Chen C, Yang M, Liu S, et al. Bio-inspired neurons based on novel leaky-FeFET with ultra-low hardware cost and advanced functionality for all-ferroelectric neural network. In: Proceedings of Symposium on VLSI Technology (VLSI), 2019. 136–137
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