Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s11432-021-3324-0.pdf
Reference6 articles.
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2. Luo X R, Zhang K, Song X, et al. 4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region. J Semicond, 2020, 41: 102801
3. Yang Z, Zhu J, Tong X, et al. Investigations of inhomogeneous reverse recovery behavior of the body diode in superjunction MOSFET. In: Proceedings of the 29th International Symposium on Power Semiconductor Devices and IC’s (ISPSD), Sapporo, 2017. 155–158
4. Saito W, Omura I, Aida S, et al. High breakdown voltage (> 1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process. IEEE Trans Electron Devices, 2005, 52: 2317–2322
5. Aiba R, Okawa M, Kanamori T, et al. Experimental demonstration on superior switching characteristics of 1.2 kV SiC SWITCH-MOS. In: Proceedings of the 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, 2019. 23–26
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