Author:
Wang YongShun,Luo XianLiang,Li HaiRong,Wang ZiTing,Wu Rong,Zhang CaiZhen,Li SiYuan
Publisher
Springer Science and Business Media LLC
Reference14 articles.
1. Bencuya I, Cogan A J, Butle S J, et al. Static induction transistors optimized for high-voltage operation and high microwave power output. IEEE Trans Electron Devic, 1985, 32: 1321–1327
2. Nishizawa J I, Ohmi T, Chen H L. Analysis of static characteristics of a bipolar-mode induction transistor (BSIT). IEEE Trans Electron Devic, 1982, ED-29: 1233–1244
3. Wang J, Williams B W. A new static induction thyristor (SITh) analytical model. IEEE Trans Power Electron, 1999, 14: 866–876
4. Ohnuma T, Obonai F, Hayasaka E. Development of high-frequency, high-power static induction transistor for 13 MHz band. In: Proc. 10th Int. Symp. Static Induction Transistor Devices SSID-97-6. Tokyo, 1997
5. Nishizawa J I, Motoyan K, Itioh A. The 2.45 GHz 36 W CW Si recessed gate type SIT with high gain and high voltage operation. IEEE Trans Electron Devic, 2000, 47: 482–487
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献