Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
http://link.springer.com/content/pdf/10.1007/s11432-011-4523-1.pdf
Reference14 articles.
1. Kotani M, Higaki Y, Kato M, et al. Characteristics of high-power and high-Breakdown-voltage static induction transistor with the high maximum frequency of oscillation. IEEE Trans Electron Dev, 1982, 2: 194–198
2. Nishizawa J I, Ohmi T, Chen H. Analysis of static characteristics of a BSIT. IEEE Trans Electron Dev, 1982, 29: 1233–1244
3. Bencuya I, Cogan A J, Butler S J, et al. Static induction transistors optimized for high-voltage operation and high microwave power output. IEEE Trans Electron Dev, 1985, 32: 1321–1327
4. Sung Y M, Casady J B, Dufrene J B, et al. A review of SiC static induction transistor development for high-frequency power amplifiers. Solid State Electron, 2002, 46: 605–615
5. Bulucea C, Rusu A. A first order theory of the static induction transistor. Solid State Electron, 1987, 30: 1227–1242
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical performance of static induction transistor with transverse structure;Science China Information Sciences;2016-11-14
2. Switching performances of static induction thyristor with buried-gate structure;Science China Information Sciences;2014-05-13
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