Author:
Sung Y.M.,Casady J.B.,Dufrene J.B.,Agarwal A.K.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Watanabe Y, Nishizawa J. Jap Patent 205060: Published no. 28-6077, December 1950
2. The 2.45 GHz 36 W CW Si recessed gate type SIT with high gain and high voltage operation;Nishizawa;IEEE Trans Electron Dev,2000
3. Field effect transistor versus analog transistor (static induction transistor);Nishizawa;IEEE Trans Electron Dev,1975
4. High-power static induction transistor;Nishizawa;IEEE Trans Electron Dev,1978
5. Clarke RC. IEEE Device Research Conference, 1996
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