Author:
Liu ChunJuan,Liu Su,Bai YaJie
Publisher
Springer Science and Business Media LLC
Reference12 articles.
1. Bencuya I, Cogan A I, Butler S J, et al. Static induction transistors optimized for high-voltage operation and high microwave power output. IEEE Trans Electron Dev, 1985, 32: 1321–1327
2. Nishizawa J I, Ohmi T, Chen H L. Analysis of static characteristics of a bipolar-mode SIT (BSIT). IEEE Trans Electron Dev, 1982, 29: 1233–1244
3. Tsunoda K, Maeyama M, Hotta E, et al. Switching properties of series connected static induction thyristor stack. In: Procedings of IEEE 13th Pulsed Power Conference, Las Vegas, 2001. 1786–1789
4. Wang Y S, Feng J J, Liu C J, et al. Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure. Sci China Inf Sci, 2012, 55: 962–970
5. Nishizawa J I. Low-loss high-speed switching devices, 2300-V 150-A static induction thyristor. IEEE Trans Electron Dev, 1985, 32: 822–830
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献