Vertical SnS2/Si heterostructure for tunnel diodes
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
http://link.springer.com/content/pdf/10.1007/s11432-019-9836-9.pdf
Reference22 articles.
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3. Zhao Y, Wu C L, Huang Q Q, et al. A novel tunnel FET design through adaptive bandgap engineering with constant sub-threshold slope over 5 decades of current and high ION/IOFF ratio. IEEE Electron Device Lett, 2017, 38: 540–543
4. Dey A W, Borg B M, Ganjipour B, et al. High-current GaSb/InAs(Sb) nanowire tunnel field-effect transistors. IEEE Electron Device Lett, 2013, 34: 211–213
5. Liu Y, Weiss N O, Duan X D, et al. Van der Waals heterostructures and devices. Nat Rev Mater, 2016, 1: 16042
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