Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s11432-021-3544-2.pdf
Reference6 articles.
1. Müller J, Yurchuk E, Schlösser T, et al. Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG. In: Proceedings of 2012 Symposium on VLSI Technology (VLSIT), 2012
2. Luo Q, Cheng Y, Yang J, et al. A highly CMOS compatible hafnia-based ferroelectric diode. Nat Commun, 2020, 11: 1391
3. Meena J S, Chu M C, Tiwari J N, et al. Flexible metal-insulator-metal capacitor using plasma enhanced binary hafnium-zirconium-oxide as gate dielectric layer. Microelectron Reliability, 2010, 50: 652–656
4. Jindal S, Manhas S K, Balatti S, et al. Temperature-dependent field cycling behavior of ferroelectric hafnium zirconium oxide (HZO) MFM capacitors. IEEE Trans Electron Devices, 2022, 69: 3990–3996
5. Ma W C Y, Li M J, Luo S M, et al. Gate capacitance effect on P-type tunnel thin-film transistor with TiN/HfZrO2 gate stack. Thin Solid Films, 2020, 697: 137818
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