Flexible metal–insulator–metal capacitor using plasma enhanced binary hafnium–zirconium–oxide as gate dielectric layer-Reference-Cited by-同舟云学术

Flexible metal–insulator–metal capacitor using plasma enhanced binary hafnium–zirconium–oxide as gate dielectric layer

Published:2010-05 Issue:5 Volume:50 Page:652-656
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Meena Jagan Singh,Chu Min-Ching,Tiwari Jitendra N.,You Hsin-Chiang,Wu Chung-Hsin,Ko Fu-Hsiang

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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