Gate capacitance effect on P-type tunnel thin-film transistor with TiN/HfZrO2 gate stack-Reference-Cited by-同舟云学术

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Gate capacitance effect on P-type tunnel thin-film transistor with TiN/HfZrO2 gate stack

Published:2020-03 Issue: Volume:697 Page:137818
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ma William Cheng-Yu,Li Ming-Jhe,Luo Shen-Ming,Lin Jiun-Hung,Tsai Cai-Jia

Funder

Ministry of Science and Technology, Taiwan

Taiwan Semiconductor Research Institute

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. A short-channel I – V model for 2-D MOSFETs;Taur;IEEE Trans. Electron Devices,2016

2. Review and critique of analytic models of MOSFET short-channel effects in subthreshold;Xie;IEEE Trans. Electron Devices,2012

3. The influence of source and drain junction depth on the short-channel effect in MOSFETs;Sleva;IEEE Trans. Electron Devices,2005

4. Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's;Yu;IEEE Trans. Electron Devices,1997

5. Low-voltage tunnel transistors for beyond CMOS logic;Seabaugh,2010

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes;Science China Information Sciences;2023-10-07

2. Ferroelectric Tunnel Thin-Film Transistor for Synaptic Applications;ECS Journal of Solid State Science and Technology;2023-05-01

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