Author:
Chen Frederick T.,Lee HengYuan,Chen YuSheng,Hsu YenYa,Zhang LiJie,Chen PangShiu,Chen WeiSu,Gu PeiYi,Liu WenHsing,Wang SuMin,Tsai ChenHan,Sheu ShyhShyuan,Tsai MingJinn,Huang Ru
Publisher
Springer Science and Business Media LLC
Reference52 articles.
1. Lee H Y, Chen P S, Wu T Y, et al. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2-based RRAM. In: IEDM 2008, 2008. 297–300
2. Mott N F. Metal-insulator transition. Rev Mod Phys, 1968, 40: 677–683
3. Wu Y, Lee B, Wong H P S. Ultra-low power Al2O3-based RRAM with 1 μA RESET current. In: VLSI-TSA 2010. 2010. 136–137
4. Lee H Y, Chen Y S, Chen P S, et al. Evidence and solutions of Over-RESET problem for HfOx-based resistive memory with sub-ns switching speed and high endurance. In: IEDM 2010. 460–463
5. Waser R. Resistive non-volatile memory devices. Microelectr Eng, 2009, 86: 1925–1928
Cited by
26 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献