Uniform, fast, and reliable CMOS compatible resistive switching memory

Abstract

Abstract Resistive switching random access memory (RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaO x layer into HfO x -based RRAM to optimize the device performance. Attributing to robust filament formed in the TaO x layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows (> 103), fast switching speed (~ 10 ns), steady retention (> 72 h), high endurance (> 108 cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaO x layer can significantly improve HfO x -based device performance, providing a constructive approach for the practical application of RRAM.