Structural and optical properties of InGaN/GaN triangular-shape quantum wells with different threading dislocation densities
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Chemical Engineering,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/BF02705411.pdf
Reference17 articles.
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2. Cho, Y.H., Gainer, G.H., Fischer, A. J., Song, J. J., Keller, S., Mishra, U.K. and Denaars, S. P., “S-shaped Temperature-dependent Emission Shift and Carrier Dynamics in InGaN/GaN Multiple Quantum Wells,”Appl. Phys. Lett.,73, 1370 (1998).
3. Choi, R. J., Shim, H.W., Jeong, S. M., Yoon, H. S., Suh, E.-K., Hong, C.-H., Lee, H. J. and Kim, Y.W., “Triangular Quantum Well of InGaN-GaN for Active Layer of Light-Emitting Device,”Phys. Stat. Sol.,192(2), 430 (2002).
4. Choi, R. J., Shim, H.W., Han, M. S., Suh, E.-K., Lee, H. J. and Hahn, Y. B., “Efficient Blue Light-emitting Diodes with InGaN/GaN Triangular Shaped Multiple Quantum Wells,”Appl. Phys. Lett.,82, 2764 (2002).
5. Choi, R. J., Hahn, Y. B., Shim, H.W., Suh, E.K., Hong, C.-H. and Lee, H. J., “Improvement of Electrical and Optical Properties of InGaN/ GaN-Based Light-Emitting Diodes with Triangular Quantum Well Structure,”Korean J. Chem. Eng.,20, 1134 (2003).
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