Plasma Etching Techniques to Form High-Aspect-Ratio MEMS Structures
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Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-1-4757-5791-0_14
Reference17 articles.
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2. A. A. Ayon, X. Zhang and R. Khanna. Anisotropic silicon trenches 300–500 gm deep employing Time Multiplexed Deep Etching (TMDE). Sensors and Actuators, 2001; A91: 381.
3. A. A. Ayon, K. Ishihara, R. A. Braff, H. H. Sawin and M. A. Schmidt. Microfabrication and testing of suspended structures compatible with silicon-on-insulator technology. J. Vac. Sci. Technol., 1999; B17: 1589.
4. J. W. Weigold, W. H. Juan and S. W. Pang. Etching of boron diffusion of high aspect ratio Si trenches for released resonators. J. Vac. Sci. Technol., 1997; B15: 267.
5. K. W. Kok, W. J. Yoo and K. Sooriakumar. In situ trench etching and releasing techniques of high aspect ratio beams using MERLE. J. Vac. Sci. Technol., 2002; B20: 154.
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