Anisotropic silicon trenches 300–500 μm deep employing time multiplexed deep etching (TMDE)-Reference-Cited by-同舟云学术

Anisotropic silicon trenches 300–500 μm deep employing time multiplexed deep etching (TMDE)

Published:2001-07 Issue:3 Volume:91 Page:381-385
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Ayón A.A.,Zhang X.,Khanna R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference19 articles.

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2. Macro Power from Micro Machinery

3. Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher

4. Influence of Coil Power on the Etching Characteristics in a High Density Plasma Etcher

5. F. Laerme, A. Schilp, K. Funk, M. Offenberg, in: Proceedings of the 12th IEEE International Conference on Microelectromechanical Systems, Orlando, FL, 17–21 January, 1999, pp. 211–216.

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