Deep X-ray Lithography for MEMS — Photoelectron Exposure of the Upper and Bottom Resist Layers
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Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-1-4757-5791-0_10
Reference7 articles.
1. Becker, E.W., W.Ehrfeld, D.Munchmeyer, H.Betz, A.Heuberger, S.Pongratz, W.Glashauser, H.J.Michel and V.R.Siemens. Production of separation nozzle systems for uranium enrichment by a combination of X-ray lithography and galvanoplasties. Naturwisenschaften, 1982; 69: 520–523.
2. Becker, E.W., W.Ehrfeld, P.Hagmann, A.Maner and D.Munchmeyer. Fabrication of microstructures with high aspect ratios and great structural heights by synchrotron radiation lithography, galvanoforming and plastic molding (LIGA process). Microelectronic Engineering, 1986; 4: 35–56.
3. A.L.Bogdanov and S.S.Peredkov. Use of SU-8 photoresist for very high aspect ratio x-ray lithography. Microelectronic Engineering, 2000; 53: 493–496.
4. Vladimir Kudryashov and Sing Lee. High aspect ratio structures formation in X-ray lithography. Proceedings of SPIE, 2000; 4230: 147–155.
5. V.V.Aristov, V.A.Kudryashov and A.A.Svintsov. Photoelectron exposure of X-ray resists. Microelectronic Engineering, 1985; 3: 597–601.
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