Capacitance transient spectra of processing- and radiation-induced defects in silicon solar cells-Reference-Cited by-同舟云学术

Capacitance transient spectra of processing- and radiation-induced defects in silicon solar cells

Published:1980-03 Issue:2 Volume:9 Page:419-434
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Schott J. T.,DeAngelis H. M.,Drevinsky P. J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02670858.pdf

Reference13 articles.

1. P. J. Drevinsky, J. T. Schott, H. M. DeAngelis, A. R. Kirkpatrick, and J. A. Minnucci, Conf. Record of the Thirteenth IEEE Photovoltaics Specialists Conference - 1978, 1232 (1978).

2. D. V. Lang, J. Appl. Phys.45, 3023 (1974).

3. G. L. Miller, D. V. Lang, and L. C. Kimerling, Ann. Rev. Mat. Sci. 1977, 377 (1977).

4. J. T. Schott, RADC-TR-79-258 (1979).

5. J. T. Schott, H. M. DeAngelis, and W. R. White, AFCRL-TR-76-0024 (1976).

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