The study of relaxation in asymmetrically strained Si1−x Ge x Si superlattices-Reference-Cited by-同舟云学术

The study of relaxation in asymmetrically strained Si1−x Ge x Si superlattices

Published:1991-05 Issue:5 Volume:20 Page:389-394
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Prokes S. M.,Glembocki O. J.,Twigg M. E.,Wang K. L.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02670889.pdf

Reference17 articles.

1. G. S. Higashi, J. C. Bean, C. Buescher, R. Yadvish and H. Temkin, Appl. Phys. Lett.56, 2560 (1990).

2. G. L. Patton, S. S. Iyer, S. L. Delaage, S. Tiwari and J. M. Stork, IEEE Elec. Dev. Lett.9, 165 (1988).

3. J. C. Sturm, E. J. Prinz, P. M. Garone and P. V. Schwartz, Appl. Phys. Lett.54, 2707 (1989).

4. W. Frank, U. Gosele, H. Mehrer and A. Seeger, in Diffusion in Crystalline Solids, eds. G. E. Murch and A. S. Nowick, (Academic Press, New York, 1984).

5. J. C. Bean, A. F. Fiory, R. Hull and R. T. Lynch, in Proc.1st Int. Symp. on Si MBE, ed. J. C. Bean (Electrochemical Soc., Pennington, NJ, 1985) p. 385.

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1. Defect-free strain relaxation in locally MBE-grown SiGe heterostructures;Thin Solid Films;1997-02

2. Strain relaxation and self-organizing MBE-growth of local SiGe-structures;Applied Surface Science;1996-08

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4. Effects of stress on interdiffusion in Si_1−xGe_x/Si superlattices;Materials Science and Technology;1995-04-01

5. Effects of strain on boron diffusion in Si and Si1−xGex;Applied Physics Letters;1995-01-30