Ni/W/Ni ohmic contacts for both n- and p-type 4H-SiC
Author:
Publisher
Springer Science and Business Media LLC
Subject
Applied Mathematics,Electrical and Electronic Engineering
Link
http://link.springer.com/article/10.1007/s00202-018-0711-y/fulltext.html
Reference18 articles.
1. Ohyanagi T, Onose Y, Watanabe A (2008) Ti/Ni bilayer Ohmic contact on 4H-SiC. J Vac Sci Technol B 26:1359
2. Liu S, Scofield J (1998) Thermally stable ohmic contacts to 6H- and 4H- p-type SiC. In: Proc 4th Int High Temperature Electron Conference, pp 88–92
3. Wang Z, Liu W, Wang C (2016) Recent progress in Ohmic contacts to silicon carbide for high-temperature applications. J Electron Mater 45(1):267–284
4. Kuchuk AV, Guziewicz M, Ratajczak R, Wzorek M, Kladko VP, Piotrowska A (2008) Long-term stability of Ni-silicide ohmic contact to n-type 4H-SiC. Microelectron Eng 85(10):2142–2145
5. Kuchuk AV, Guziewicz M, Ratajczak R, Wzorek M, Kladko VP, Piotrowska A (2009) Thermal degration of Au/Ni2Si/n-SiC ohmic contacts under differenct conditions. Mater Sci Eng B 165(1–2):38–41
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