Author:
Shao Jie,Shi Tielin,Du Li,Su Lei,Lu Xiangning,Liao Guanglan
Publisher
Springer Science and Business Media LLC
Reference38 articles.
1. Liu X, Chen Q, Dixit P, et al. Failure mechanisms and optimum design for electroplated copper through-silicon vias (TSV). In: Proceedings of Electronic Components and Technology Conference. IEEE, 2009, 624–629
2. Knickerbocker J U, Andry P S, Dang B, et al. Three-dimensional silicon integration. IBM Journal of Research and Development, 2008, 52(6): 553–569
3. Kamto A, Liu Y, Schaper L, et al. Reliability study of throughsilicon via (TSV) copper filled interconnects. Thin Solid Films, 2009, 518(5): 1614–1619
4. Saettler P, Hecker M, Boettcher M, et al. m-Raman spectroscopy and FE-modeling for TSV-Stress-characterization. Microelectronic Engineering, 2015, 137: 105–110
5. Du L, Shi T, Chen P, et al. Optimization of through silicon via for three-dimensional integration. Microelectronic Engineering, 2015, 139: 31–38
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献