Preparation and characterization of single (200)-oriented TiN thin films deposited by DC magnetron reactive sputtering
Author:
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys,Physical and Theoretical Chemistry,Condensed Matter Physics
Link
http://link.springer.com/content/pdf/10.1007/s12598-015-0517-2.pdf
Reference22 articles.
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2. Kirchner CN, Hallmeier KH, Szargan R, Raschke T, Radehaus C. Evaluation of thin film titanium nitride electrodes for electroanalytical applications. Electroanalysis. 2007;19(3):1023.
3. Tao M, Udeshi D, Agarwal S, Maldonado E, Kirk WP. Negative Schottky barrier between titanium and n-type Si (001) for low-resistance ohmic contacts. Solid State Electron. 2004;48(12):335.
4. Naik GV, Schroeder JL, Ni X, Kildishev AV, Sands TD, Boltasseva A. Titanium nitride as a plasmonic material for visible and near-infrared wavelengths. Opt Express. 2012;2:478.
5. Cyster LA, Grant DM, Parker KG, Parker TL. The effect of surface chemistry and structure of titanium nitride (TiN) films on primary hippocampal cells. Biomol Eng. 2002;19(2–6):171.
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