Negative Schottky barrier between titanium and n-type Si() for low-resistance ohmic contacts-Reference-Cited by-同舟云学术

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Negative Schottky barrier between titanium and n-type Si() for low-resistance ohmic contacts

Published:2004-02 Issue:2 Volume:48 Page:335-338
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tao M.,Udeshi D.,Agarwal S.,Maldonado E.,Kirk W.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Physics of semiconductor devices;Sze,1981

2. Surface states and barrier height of metal–semiconductor systems;Cowley;J. Appl. Phys.,1965

3. Removal of dangling bonds and surface states on Si(001) surface by a monolayer of Se;Tao;Appl. Phys. Lett.,2003

4. The work function of the elements and its periodicity;Michaelson;J. Appl. Phys.,1977

5. Tao M, Agarwal S, Udeshi D, Basit N, Maldonado E, Kirk WP. Low Schottky barrier on n-type Si(001). Appl Phys Lett 2003; in press

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