Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference58 articles.
1. Agarwal A, Mukhopadhyay S, Raychowdhury A, Roy K, Kim CH (2006) Leakage power analysis and reduction for nanoscale circuits. IEEE Micro 26(2):68–80
2. Ahmad S, Alam N, Hasan M (2018) Pseudo differential multi-cell upset immune robust SRAM cell for ultra-low power applications. AEU Int J Electron Commun 83:366–375
3. Ahmad S, Gupta MK, Alam N, Hasan M (2017) Low leakage single bitline 9 T (SB9T) static random access memory. Microelectronics J 62:1–11
4. Ali M, Ahmed M, Chrzanowska-jeske M (2015) Logical Effort model for CNFET—based circuits. In: IEEE International Conference on Nanotechnology, pp 1218–1221
5. Alibart F, Gao L, Hoskins BD, Strukov DB (2012) High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm. Nanotechnology 23:7
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献