Design of resistive random access memory cell and its architecture-Reference-Cited by-同舟云学术

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Design of resistive random access memory cell and its architecture

Published:2019-10-28 Issue:4 Volume:26 Page:1325-1332
ISSN:0946-7076
Container-title:Microsystem Technologies
language:en
Short-container-title:Microsyst Technol

Author:

Dubey Shashank Kumar,Islam Aminul

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s00542-019-04663-1.pdf

Reference52 articles.

1. Alibart F, Gao L, Hoskins BD, Strukov DB (2012) High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm. Nanotechnology 23(7):075201

2. Bennett WG et al (2014) Dynamic modeling of radiation-induced state changes in HfO2/Hf 1T1R RRAM. IEEE Trans Nucl Sci 61(6):3497–3503

3. Biolek Z, Biolek D, Biolková V (2009) SPICE model of memristor with nonlinear dopant drift. Radioengineering 18(2):210–214

4. Borghetti J, Snider GS, Kuekes PJ, Yang JJ, Stewart DR, Williams RS (2010) ‘Memristive’ switches enable ‘stateful’ logic operations via material implication. Nature 464:873–876

5. Chen A, Lin M (2011) Variability of resistive switching memories and its impact on crossbar array performance. In: 2011 International reliability physics symposium, Monterey, CA, USA, 2011, pp 843–846

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