Selective TiSi2 deposition with no silicon substrate consumption by rapid thermal processing in a LPCVD reactor-Reference-Cited by-同舟云学术

Selective TiSi2 deposition with no silicon substrate consumption by rapid thermal processing in a LPCVD reactor

Published:1990-03 Issue:3 Volume:19 Page:253-258
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Mercier J.,Regolini J. L.,Bensahel D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02733815.pdf

Reference16 articles.

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2. V. Ilderem and R. Reif, J. Electrochem. Soc. 135, 2590 (1988).

3. R. S. Rosler and G. M. Engle, J. Vac. Sci. Technol. B2, 733 (1984).

4. M. J. H. Kemper, S. W. Koo, F. Huizinga, The Electrochem. Soc. Ext. Abst. (New Orleans) 84, 533 (1984).

5. G. J. Reynolds, C. B. Cooper III, P. J. Gaczi, J. Appl. Phys. 65, 3212 (1989).

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