Single-photon avalanche diode detectors based on group IV materials-Reference-Cited by-同舟云学术

Single-photon avalanche diode detectors based on group IV materials

Published:2021-02-06 Issue: Volume: Page:
ISSN:2190-5509
Container-title:Applied Nanoscience
language:en
Short-container-title:Appl Nanosci

Author:

Izhnin Ihor I.,Lozovoy Kirill A.,Kokhanenko Andrey P.,Khomyakova Kristina I.,Douhan Rahaf M. H.,Dirko Vladimir V.,Voitsekhovskii Alexander V.,Fitsych Olena I.,Akimenko Nataliya Yu.

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Cell Biology,Physical and Theoretical Chemistry,Materials Science (miscellaneous),Atomic and Molecular Physics, and Optics,Biotechnology

Link

http://link.springer.com/content/pdf/10.1007/s13204-021-01667-0.pdf

Reference58 articles.

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2. Ali D, Richardson CJK (2014) Strain-balanced Si/SiGe type-II superlattices for near-infrared photodetection. Appl Phys Lett 105:031116

3. Campbell JC (2007) Recent advances in telecommunications avalanche photodiodes. IEEE J Lightwave Technol 25:109–121

4. Chen HT, Verbist J, Verheyen P, De Heyn P, Lepage G, De Coster J, Absil P, Yin X, Bauwelinck J, Van Campenhout J, Roelkens G (2015) High sensitivity 10 Gbp/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector. Opt Exp 23:815–822

5. Chen L, Zhang S, Ye Y, Liu C, Zhao T, Shi Y, Tian Y, Xu R, Chen Y (2020) Research on the metasurface for single-photon avalanche photodiode. Front Phys 8:585871

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