Low Noise and High Photodetection Probability SPAD in 180 nm Standard CMOS Technology-Reference-Cited by-同舟云学术

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Low Noise and High Photodetection Probability SPAD in 180 nm Standard CMOS Technology

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Symposium on Circuits and Systems (ISCAS)
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Author:

Accarino Claudio,Al-Rawhani Mohammed,Shah Yash Diptesh,Maneuski Dzmitry,Mitra Srinjoy,Buttar Craig,Cumming David R. S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8334884/8350884/08351173.pdf?arnumber=8351173

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon-Based Avalanche Photodiodes: Advancements and Applications in Medical Imaging;Nanomaterials;2023-12-04

2. A P-type enrichment/High Voltage N-Well Junction Si-SPAD With Enhanced Near-infrared Sensitivity in 180 nm BCD Technology;IEEE Electron Device Letters;2023

3. Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes;IEEE Photonics Journal;2022-02

4. Time-Gated and Multi-Junction SPADs in Standard 65 nm CMOS Technology;IEEE Sensors Journal;2021-05-15

5. Single-photon avalanche diode detectors based on group IV materials;Applied Nanoscience;2021-02-06

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