Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors-Reference-Cited by-同舟云学术

Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors

Published:2022-05-05 Issue:7 Volume:15 Page:6620-6627
ISSN:1998-0124
Container-title:Nano Research
language:en
Short-container-title:Nano Res.

Author:

Guo Xiaojiao,Chen Honglei,Bian Jihong,Liao Fuyou,Ma Jingyi,Zhang Simeng,Zhang Xinzhi,Zhu Junqiang,Luo Chen,Zhang Zijian,Zong Lingyi,Xia Yin,Sheng Chuming,Xu Zihan,Gou Saifei,Wang Xinyu,Gong Peng,Liu Liwei,Jiang Xixi,An Zhenghua,Cong Chunxiao,Qiu Zhijun,Wu Xing,Zhou Peng,Chen Xinyu,Tong Ling,Bao Wenzhong

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,General Materials Science,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://link.springer.com/content/pdf/10.1007/s12274-022-4280-z.pdf

Reference54 articles.

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3. Manzeli, S.; Ovchinnikov, D.; Pasquier, D.; Yazyev, O. V.; Kis, A. 2D transition metal dichalcogenides. Nat. Rev. Mater. 2017, 2, 17033.

4. Novoselov, K. S.; Mishchenko, A.; Carvalho, A.; Castro Neto, A. H. 2D materials and van der Waals heterostructures. Science 2016, 353, aac9439.

5. Kwon, J.; Lee, J. Y.; Yu, Y. J.; Lee, C. H.; Cui, X.; Hone, J.; Lee, G. H. Thickness-dependent Schottky barrier height of MoS2 field-effect transistors. Nanoscale 2017, 9, 6151–6157.

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