Versatile memristor implemented in van der Waals CuInP2S6-Reference-Cited by-同舟云学术

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Versatile memristor implemented in van der Waals CuInP2S6

Published:2023-03-31 Issue:7 Volume:16 Page:10191-10197
ISSN:1998-0124
Container-title:Nano Research
language:en
Short-container-title:Nano Res.

Author:

Liu Yiqun,Wu Yonghuang,Wang Bolun,Chen Hetian,Yi Di,Liu Kai,Nan Ce-Wen,Ma Jing

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,General Materials Science,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://link.springer.com/content/pdf/10.1007/s12274-023-5583-4.pdf

Reference50 articles.

1. Sebastian, A.; Le Gallo, M.; Khaddam-Aljameh, R.; Eleftheriou, E. Memory devices and applications for in-memory computing. Nat. Nanotechnol. 2020, 15, 529–544.

2. Cheng, C. D.; Tiw, P. J.; Cai, Y. M.; Yan, X. Q.; Yang, Y. C.; Huang, R. In-memory computing with emerging nonvolatile memory devices. Scie. China Inf. Sci. 2021, 64, 221402.

3. Ielmini, D.; Wong, H. S. P. In-memory computing with resistive switching devices. Nat. Electron. 2018, 1, 333–343.

4. Sung, S. H.; Kim, T. J.; Shin, H.; Namkung, H.; Im, T. H.; Wang, H. S.; Lee, K. J. Memory-centric neuromorphic computing for unstructured data processing. Nano Res. 2021, 14, 3126–3142.

5. Wang, W.; Covi, E.; Lin, Y. H.; Ambrosi, E.; Milozzi, A.; Sbandati, C.; Farronato, M.; Ielmini, D. Switching dynamics of ag-based filamentary volatile resistive switching devices-part II: Mechanism and modeling. IEEE Trans. Electron Devices 2021, 68, 4342–4349.

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