Dominant reaction channels and the mechanism of silane decomposition in a H2-Si(s)-SiH4 glow discharge-Reference-Cited by-同舟云学术

Dominant reaction channels and the mechanism of silane decomposition in a H2-Si(s)-SiH4 glow discharge

Published:1987-06 Issue:2 Volume:7 Page:139-153
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chem Plasma Process

Author:

Ensslen K.,Vepřek S.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF01019174.pdf

Reference23 articles.

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2. G. Turban,Pure Appl. Chem. 56, 215 (1984).

3. F. J. Kampas, inHydrogenated Amorphous Silicon, Vol. A, J. I. Pankove, ed., Academic Press, New York (1984).

4. G. Turban, Y. Catherine, and B. Grolleau,Thin Solid Films 67, 309 (1980).

5. G. Turban, Y. Catherine, and B. Grolleau,Plasma Chem. Plasma Process. 2, 61 (1982).

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