Anisotropy Factors of Co-Based Thin Films Computed from FMR and AGFM Studies
Author:
Funder
University Sétif1
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/article/10.1007/s10948-016-3803-9/fulltext.html
Reference24 articles.
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2. Nakamura, S., Senoh, M., Mukai, T.: Highpower InGaN/GaN doubleheterostructure violet light emitting diodes. Appl. Phys. Lett. 62, 2390 (1993)
3. Nakamura, S.: InGaN/AlGaN bluelightemitting diodes. J. Vacuum Sci. Technol. A 13, 705 (1995)
4. Burm, J., Schaff, W.J., Eastman, L F, Amano, H., Akasaki, I.: 75 Å GaN channel modulation doped field effect transistors. Appl. Phys. Lett. 68, 2849 (1996)
5. Yamaguchi, S., Kariya, M., Nitta, S., Takeuchi, T., Wetzel, C., Amano, H., Akasaki, I.: Anomalous features in the optical properties of Al 1x In x N on GaN grown by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 76, 876 (2000)
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