High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires-Reference-Cited by-同舟云学术

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High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

Published:2016-03-05 Issue:3 Volume:8 Page:247-253
ISSN:2311-6706
Container-title:Nano-Micro Letters
language:en
Short-container-title:Nano-Micro Lett.

Author:

Tao Zhi,Huang Yi-an,Liu Xiang,Chen Jing,Lei Wei,Wang Xiaofeng,Pan Lingfeng,Pan Jiangyong,Huang Qianqian,Zhang Zichen

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s40820-016-0083-7.pdf

Reference29 articles.

1. C.H. Wu, K.M. Chang, S.H. Huang, I.C. Deng, C.J. Wu, W.H. Chiang, C.C. Chang, Characteristics of IGZO TFT prepared by atmospheric pressure plasma jet using PE-ALD Al2O3 gate dielectric. IEEE Electron Device Lett. 33(4), 552–554 (2012). doi: 10.1109/LED.2012.2185774

2. S. Jeon, S.E. Ahn, I. Song, C.J. Kim, U.I. Chung, E. Lee, I. Yoo, A. Nathan, S. Lee, J. Robertson, K. Kim, Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays. Nat. Mater. 11(4), 301–305 (2012). doi: 10.1038/nmat3256

3. E. Fortunato, P. Barquinha, R. Martins, Oxide semiconductor thin-film transistors: a review of recent advances. Adv. Mater. 24(22), 2945–2986 (2012). doi: 10.1002/adma.201103228

4. K. Ghaffarzadeh, A. Nathan, J. Robertson, S. Kim, S. Jeon, C. Kim, U.I. Chung, J.-H. Lee, Persistent photoconductivity in Hf-In-Zn-O thin film transistors. Appl. Phys. Lett. 97, 143510 (2010). doi: 10.1063/1.3496029

5. K. Ghaffarzadeh, A. Nathan, J. Robertson, S. Kim, S. Jeon, C. Kim, U.I. Chung, J.-H. Lee, Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress. Appl. Phys. Lett. 97, 113504 (2010). doi: 10.1063/1.3480547

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