Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory

Author:

Sun Pengxiao,Li Ling,Lu Nianduan,Li Yingtao,Wang Ming,Xie Hongwei,Liu Su,Liu Ming

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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1. Exploring the Potential of Thermal Avalanche in Resistive Switching Memory;Proceeding of Proceedings of the 27th National and 5th International ISHMT-ASTFE Heat and Mass Transfer Conference December 14-17, 2023, IIT Patna, Patna-801106, Bihar, India;2024

2. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications;ACS Applied Electronic Materials;2023-12-29

3. Thermal Reliability Issues in ReRAM Memory Arrays;Memristors - the Fourth Fundamental Circuit Element - Theory, Device, and Applications [Working Title];2023-09-05

4. Planar CBRAM devices using non-cleanroom techniques as RF switches;Applied Physics A;2023-05-20

5. Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk;Advanced Electronic Materials;2023-02-14

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